Identifying and Engineering the Stacking Sequence in CVD Grown Few-layer MoS2 via Aberration-corrected STEM
نویسندگان
چکیده
منابع مشابه
Origins of Ripples in CVD-Grown Few-layered MoS2 Structures under Applied Strain at Atomic Scales
The potential of the applicability of two-dimensional molybdenum disulfide (MoS2) structures, in various electronics, optoelectronics, and flexible devices requires a fundamental understanding of the effects of strain on the electronic, magnetic and optical properties. Particularly important is the recent capability to grow large flakes of few-layered structures using chemical vapor deposition ...
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In a scanning transmission electron microscope (STEM), the elemental analysis at atomic resolution is realized by the combination with electron energy-loss spectroscopy (EELS), since an aberration corrected probe forming lens system enables us to obtain an electron probe sized about 0.1 nm [1]. In EELS, the energy resolution is mainly limited by the energy spread of the electron source, which i...
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We report ab initio calculations of the phonon dispersion relations of the single-layer and bulk dichalcogenides MoS2 and WS2. We explore in detail the behavior of the Raman-active modes A1g and E1 2g as a function of the number of layers. In agreement with recent Raman spectroscopy measurements [C. Lee et al., ACS Nano 4, 2695 (2010)], we find that the A1g mode increases in frequency with an i...
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Molybdenum disulphide (MoS2) is an earth-abundant material which has several industrial applications and is considered a candidate for platinum replacement in electrochemistry. Size-selected MoS2 nanoclusters were synthesised in the gas phase using a magnetron sputtering, gas condensation cluster beam source with a lateral time-of-flight mass selector. Most of the deposited MoS2 nanoclusters, a...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2017
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927617010698